Detailed characterization of extremely thin buried Ge films of monolayer thickness (6 layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the
X-ray photoelectron spectroscopy analysis of the growth kinetics of Ge on Si(001)
β Scribed by Eliezer D. Richmond
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 621 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0040-6090
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