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X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb–SiO2 composite films

✍ Scribed by Fa-Min Liu; Li-De Zhang; M.J Zheng; G.H Li

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
140 KB
Volume
158
Category
Article
ISSN
0169-4332

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✦ Synopsis

Nanocrystalline Ga In Sb particles embedded in SiO matrix were grown by radio frequency RF magnetron 0.62 0.38 2 Ž . Ž . co-sputtering. X-ray diffraction XRD patterns and X-ray photoelectron spectroscopy XPS strongly support the existence of separated nanocrystalline Ga In Sb material in a SiO matrix. XPS core level data also reveal that there exists a 0.62 0.38 2 SiO layer with a 1.1 eV chemical shift compared to that of pure SiO , indicating that the SiO chemically adheres to the 2 2 2 Ga In Sb. Room temperature Raman spectrum shows that the Raman peaks of Ga In Sb-SiO composite film 0.62 0.38 0.62 0.38 2 y1 Ž . y1 Ž . have a larger red shift of 95.3 cm LO and 120.1 cm TO than those of bulk GaSb, suggesting the existence of phonon confinement and tensile stress effects.

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