Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy
✍ Scribed by Eisenhardt, Anja ;Knübel, Andreas ;Schmidt, Ralf ;Himmerlich, Marcel ;Wagner, Joachim ;Schaefer, Juergen A. ;Krischok, Stefan
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 335 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The valence band offset (VBO) at a InN/In~0.3~Ga~0.7~N(0001) as well as HfO~2~/InN(0001) heterojunction is investigated by X‐ray photoelectron spectroscopy using monochromated AlKα radiation. The InN and In~0.3~Ga~0.7~N films were grown using plasma‐assisted molecular beam epitaxy, whereas HfO~2~ layers were deposited by plasma‐assisted electron beam evaporation. The VBOs were determined by analysing the core level binding energy and valence band maxima of bulk‐like films as well as of In~0.3~Ga~0.7~N and InN layers covered with 5 nm thick overlayers of InN and HfO~2~, respectively. The resulting VBO values are ∼0.5 eV for the InN/In~0.3~Ga~0.7~N heterojunction and ∼0.9 eV in the case of the HfO~2~/InN heterointerface.