Aluminium nitride thin รlms grown at room temperature on degenerate silicon (conducting) substrates have been studied using XPS. The hydrolysis layer at the surface of the AlN was examined using valence band measurements, and the e โ ect of 5 kV argon ion milling used to remove the hydrolysis layer w
X-ray phase analysis with depth profiling for thin films
โ Scribed by Q.Z. Cong; D.Y. Yu; L.J. Weng; F.Q. Zhang
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 564 KB
- Volume
- 213
- Category
- Article
- ISSN
- 0040-6090
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