✦ LIBER ✦

X-Ray Investigations of Dislocations in an Implanted Si Crystal Induced by Pulsed Laser Annealing

✍ Scribed by Auleytner, J. ;Skorokhod, M. ;Datsenko, L. ;Khrupa, V. ;Briginets, A.

Publisher: John Wiley and Sons
Year: 1995
Tongue: English
Weight: 214 KB
Volume: 147
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211470237

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray and RHEED Characterization of Ge I

X-ray and RHEED Characterization of Ge Ions-Implanted Si Crystals Subjected to Pulsed-Laser Annealing

✍ Prof. J. Auleytner; Dr. H. Fiedorowicz; Z. Furmanik; Dr. Z. Patron; Dr. K. Regiń 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 376 KB 👁 1 views

Study of Extended Defect Structure Induc

Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals

✍ Klinger, D. ;Lefeld-Sosnowska, M. ;Żymierska, D. ;Auleytner, J. ;Kozankiewicz, B 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 215 KB

Comparative studies of ion-implanted cry

Comparative studies of ion-implanted crystals subjected to pulsed-laser and thermal annealings by means of X-ray and electron-optical methods

✍ Auleytner, J. 📂 Article 📅 1995 🏛 John Wiley and Sons 🌐 English ⚖ 575 KB

Determination of dislocation loop size a

Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

✍ Zaumseil, P. ;Winter, U. ;Cembali, F. ;Servidori, M. ;Sourer, Z. 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 826 KB