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Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

โœ Scribed by Zaumseil, P. ;Winter, U. ;Cembali, F. ;Servidori, M. ;Sourer, Z.


Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
826 KB
Volume
100
Category
Article
ISSN
0031-8965

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