Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold. Aanalysis by simulation of X-ray rocking curves

✍ Scribed by Fabbri, R. ;Servidori, M. ;Zani, A. ;Cembali, F.

• Publisher: John Wiley and Sons
• Year: 1989
• Tongue: English
• Weight: 521 KB
• Volume: 115
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2211150209