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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

โœ Scribed by Kyutt, R N; Shulpina, I L; Mosina, G N; Ratnikov, V V; Sorokin, L M; Scheglov, M P; Ruvimov, S S; Kearns, J; Todt, V


Book ID
118127239
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
220 KB
Volume
38
Category
Article
ISSN
0022-3727

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