✦ LIBER ✦

X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates

✍ Scribed by J.Z Domagala; Z.R Zytkiewicz; B Beaumont; J Kozlowski; R Czernetzki; P Prystawko; M Leszczynski

Book ID: 108341722
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 514 KB
Volume: 245
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(02)01705-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial Lateral Overgrowth of GaN on S

Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

✍ McNally, P.J. ;Tuomi, T. ;Lowney, D. ;Jacobs, K. ;Danilewsky, A.N. ;Rantam�ki, R 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 229 KB 👁 1 views

a), T. Tuomi (b), D. Lowney 1 ) (a), K. Jacobs (c), A.N. Danilewsky (d), R. Rantama ¨ki (b), M. O'Hare (a), and L. Considine (e)

X-ray diffraction analysis of low mismat

X-ray diffraction analysis of low mismatch epitaxial layers grown on misoriented substrates

✍ M. Gailhanou; J.F. Carlin; U. Oesterle 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 606 KB

High resolution X-ray diffraction studie

High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substrates

✍ A.M. Keir; A. Graham; S.J. Barnett; J. Giess; M.G. Astles; S.J.C. Irvine 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 718 KB

X-ray diffraction study of strain and de

X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire

✍ Kyutt, R. N. ;Shcheglov, M. P. ;Ratnikov, V. V. ;Kalmykov, A. E. 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 1022 KB

## Abstract Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra

Oxidation of epitaxial Nb(110) films on

Oxidation of epitaxial Nb(110) films on a-plane sapphire substrates: An x-ray study

✍ O. Hellwig; G. Song; H. Zabel; H. W. Becker; A. Birkner 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

We studied the oxidation of epitaxial Nb(110) films on a-plane sapphire substrates at elevated temperatures with x-ray scattering techniques. Comparing atmospheric versus dry oxidation, we observe a different behaviour resulting in the formation of chemically and structurally different oxides. Under

X-ray diffraction reciprocal space and p

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

✍ Zhixin Qin; Masakazu Kobayashi; Akihiko Yoshikawa 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 139 KB