X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy

✍ Scribed by Hai Lin; Yijie Huo; Yiwen Rong; Robert Chen; Theodore I. Kamins; James S. Harris

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 986 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.173

✦ Synopsis

High resolution X-ray diffraction reciprocal space mapping (RSM) is used to study the crystal quality of step-graded In x Ga 1 À x As buffer layers grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two growth methods. The lateral correlation length of the buffer layers are described by the FWHM of diffraction peaks along the lateral directions extracted from RSM, which are good indicators of the layer's crystalline quality. The quality improvement of In x Ga 1 À x As buffer layers grown at low temperature with in-situ annealing could be determined by XRD-RSM, which is also consistent with TEM results.