Optimization of compositionally graded InxGa1−xP metamorphic buffer layers grown by solid source molecular beam epitaxy

X-ray diffraction analysis of step-grade

X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy

✍ Hai Lin; Yijie Huo; Yiwen Rong; Robert Chen; Theodore I. Kamins; James S. Harris 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 986 KB

High resolution X-ray diffraction reciprocal space mapping (RSM) is used to study the crystal quality of step-graded In x Ga 1 À x As buffer layers grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two growth methods. The lateral correlation length of the buffer layers are descr