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X-ray determination of the dislocation densities in semiconductor crystals using a Bartels five-crystal diffractometer

โœ Scribed by Healey, P. D. ;Bao, K. ;Gokhale, M. ;Ayers, J. E. ;Jain, F. C.

Book ID
114513845
Publisher
International Union of Crystallography
Year
1995
Tongue
English
Weight
662 KB
Volume
51
Category
Article
ISSN
0108-7673

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The theory of kinematic X-ray diffraction from dislocated crystals as developed in [l] is extended to crystals containing more than one set of straight parallel dislocations. The Bragg reflexion line broadening is expressed by two parameters of the dislocated cryst,al, the dislocation density, e, an