𝔖 Bobbio Scriptorium
✦   LIBER   ✦

WSix refractory gate metal process for GaAs MESFETs

✍ Scribed by J. Willer; M. Heinzle; N. Arnold; D. Ristow


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
578 KB
Volume
33
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Ion-implanted planar-gate GaAs MESFET op
✍ C. C. Meng; J. W. Chen; S. J. Liu 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 128 KB

## Abstract Ion‐implanted planar‐gate power GaAs MESFETs have been optimized for single‐voltage‐supply operation. Recessed gate MESFETs suffer from variations in pinch‐off voltage. The optimized ion‐implanted planar‐gate power GaAs MESFET has an 80 keV 4.2×10^12^/cm^2^ Si channel with a 120 keV 1.7