✦ LIBER ✦
Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation
✍ Scribed by C. C. Meng; J. W. Chen; S. J. Liu
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 128 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0895-2477
- DOI
- 10.1002/mop.1215
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✦ Synopsis
Abstract
Ion‐implanted planar‐gate power GaAs MESFETs have been optimized for single‐voltage‐supply operation. Recessed gate MESFETs suffer from variations in pinch‐off voltage. The optimized ion‐implanted planar‐gate power GaAs MESFET has an 80 keV 4.2×10^12^/cm^2^ Si channel with a 120 keV 1.7×10^12^/cm^2^ Be p‐buffer. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 44–46, 2001.