๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Refractory and silicide gate metallisations for GaAs MESFET's

โœ Scribed by David Vernon Morgan; John Wood

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
987 KB
Volume
38
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

TiW silicide-gate technology for self-al
TiW silicide-gate technology for self-aligned GaAs FET
โœ SS Gill; GJ Pryce; J Woodward ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 269 KB

Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs, UK A range of sputtered titanium-tungsten silicide compositions have been formed by two different approaches. The most successful has been the annealing of Ti0.3W0.7/Si multilayers to form a Ti0.3W0.7Si0.33 film. This contact ha