TiW silicide-gate technology for self-aligned GaAs FET

✍ Scribed by SS Gill; GJ Pryce; J Woodward

• Publisher: Elsevier Science
• Year: 1985
• Weight: 269 KB
• Volume: 129
• Category: Article
• ISSN: 0378-4363
• DOI: 10.1016/0378-4363(85)90617-5

✦ Synopsis

Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs, UK A range of sputtered titanium-tungsten silicide compositions have been formed by two different approaches. The most successful has been the annealing of Ti0.3W0.7/Si multilayers to form a Ti0.3W0.7Si0.33 film. This contact had a barrier height of 0.67 eV and an ideality factor of 1.43 after an 850°C/20 rain anneal in AsH 3. SIMS profiles have revealed that this optimum composition shows markedly lower gallium outdiffusion than other less stable barriers.