4477962 Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines

✍ Scribed by GordonC Godejahn

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 76 KB
• Volume: 25
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(85)90367-1