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WP-B4 pH ISFET's using Al2O3, Si3N4, and SiO2gate thin films

✍ Scribed by Matsuo, T.; Esashi, M.; Abe, H.


Book ID
114593267
Publisher
IEEE
Year
1979
Tongue
English
Weight
306 KB
Volume
26
Category
Article
ISSN
0018-9383

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Electrical insulation properties of sput
✍ Bartzsch, Hagen ;Glâß, Daniel ;Frach, Peter ;Gittner, Matthias ;Schultheiß, Eber πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 806 KB

## Abstract In this paper the breakdown field strength and resistivity of sputter‐deposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 Β°C. All the investigated layers showed excellent insulation properties, even at elevated samp