Low-leakage n- and p-channel Silicon-gate FET's with an SiO2-Si3N4-gate insulator

✍ Scribed by Dockerty, R.C.; Abbas, S.A.; Barile, C.A.

• Book ID: 114591794
• Publisher: IEEE
• Year: 1975
• Tongue: English
• Weight: 958 KB
• Volume: 22
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1975.18072