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Wet etching of silicon structures bounded by (311) sidewalls

โœ Scribed by D Resnik; D Vrtacnik; U Aljancic; S Amon


Book ID
114156038
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
846 KB
Volume
51-52
Category
Article
ISSN
0167-9317

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## Abstract Samples containing silicon nanowires (Siโ€NWs) and highly porous structures (Pโ€Si) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488โ€‰nm and a p