✦ LIBER ✦

Wet etching for improved GaN-based HBT performance

✍ Scribed by Jennifer A. Bardwell; Soufien Haffouz; Eugene M. Hsu; Haipeng Tang; Peter Chyurlia; James B. Webb

Book ID: 104557444
Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 189 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461358

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improvement of Reliability of GaN-Based

Improvement of Reliability of GaN-Based Light-Emitting Diodes by Selective Wet Etching With p-GaN

✍ Ha, G.-Y.; Park, T.-Y.; Kim, J.-Y.; Kim, D.-J.; Min, K.-I.; Park, S.-J. 📂 Article 📅 2007 🏛 IEEE 🌐 English ⚖ 300 KB

Using ${\rm BCl}_{3}$-Based Plasma to Mo

Using ${\rm BCl}_{3}$-Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs

✍ Lin, Bo-Wen; Niu, Chen-Yi; Hsieh, Cheng-Yu; Wang, Bau-Ming; Hsu, Wen-Ching; Lin, 📂 Article 📅 2013 🏛 IEEE 🌐 English ⚖ 247 KB

Efficiency improvement of GaN-based ligh

Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer

✍ Liu, C.H.; Kuo, D.S.; Li, S.; Chang, S.J.; Hung, S.C. 📂 Article 📅 2012 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 489 KB

Oxidation-based wet-etching method for A

Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

✍ Liu, Yang; Wang, Jin-Yan; Xu, Zhe; Cai, Jin-Bao; Wang, Mao-Jun; Yu, Min; Xie, Bi 📂 Article 📅 2013 🏛 Nonferrous Metals Society of China 🌐 English ⚖ 415 KB

Performance predictions for n-p-n AlxGa1

Performance predictions for n-p-n AlxGa1-xN/GaN HBTs

✍ Pulfrey, D.L.; Fathpour, S. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 141 KB

Growth and Characterizations of GaN-Base

Growth and Characterizations of GaN-Based LEDs Grown on Wet-Etched Stripe-Patterned Sapphire Substrates

✍ Kar Wei Ng; Jung Min Hwang; Kei May Lau 📂 Article 📅 2008 🏛 Springer US 🌐 English ⚖ 438 KB