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Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD

✍ Scribed by T. M. Cockerill; D. V. Forbes; H. Han; B. A. Turkot; J. A. Dantzig; I. M. Robertson; J. J. Coleman

Book ID
112814879
Publisher
Springer US
Year
1994
Tongue
English
Weight
992 KB
Volume
23
Category
Article
ISSN
0361-5235

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Long-wavelength strained-layer InGaAs/Ga
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✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri