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Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOxcapping layers with different stoichiometries

✍ Scribed by J.S. Yu; J.D. Song; Y.T. Lee; H. Lim


Book ID
106019034
Publisher
Springer
Year
2005
Tongue
English
Weight
448 KB
Volume
80
Category
Article
ISSN
1432-0630

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