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W-band receiver module using indium phosphide and gallium arsenide MMICs

✍ Scribed by John W. Archer; Mei Gan Shen

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
139 KB
Volume
42
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

This paper describes a low‐noise, high‐gain, single‐sideband, downconverting receiver module developed for point‐to‐point telecommunications in the 82–104‐GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used in the multi‐chip module. For RF frequencies in the 82–104‐GHz range and within a 1–3‐GHz IF band, the receiver exhibits a typical single‐sideband down‐conversion gain between 15 and 20 dB and a typical noise figure of between 4 and 5 dB. In the same frequency range, the suppression of the unwanted sideband is typically −15 dB or more. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 92–95, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20218

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