## Abstract This paper describes a low‐noise, high‐gain, single‐sideband, downconverting receiver module developed for point‐to‐point telecommunications in the 82–104‐GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used in t
W-band transmitter module using gallium arsenide mmics
✍ Scribed by John W. Archer; Mei Gan Shen
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 136 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This paper describes a high‐gain, single‐sideband, upconverting transmitter module developed for point‐to‐point telecommunications in the 83–87‐GHz band. Four gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs), which can readily be fabricated using standard commercial processes, are used in the multichip module. The transmitter exhibits a typical lower‐sideband up‐conversion gain of 20 dB and a typical output power of +5 dBm (at −1‐dB gain compression) between 83 and 87 GHz. Suppression of the higher sideband is greater than −15 dB. The two‐tone, 3^rd^‐order intercept point is typically +15 dBm for a tone spacing of 100 MHz at the lower sideband IF input. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 210–213, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20255
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