176–200-GHz receiver module using indium phosphide and gallium arsenide MMICs

✍ Scribed by John W. Archer; Mei Gan Shen

• Publisher: John Wiley and Sons
• Year: 2004
• Tongue: English
• Weight: 185 KB
• Volume: 43
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.20501

✦ Synopsis

Abstract

This paper describes an integrated circuit‐based, down‐converting receiver module operating in the 176–200‐GHz range. The multichip module incorporates a cascaded pair of indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifiers, providing a combined gain of more than 30 dB over the 176–200‐GHz band. The output from the amplifiers is fed to a subharmonically pumped InP passive‐HEMT block down‐converter that provides an IF output in the 0.5–15‐GHz range with a local oscillator (LO) signal between 46 and 50 GHz. A gallium arsenide (GaAs) medium‐power amplifier provides the LO drive for the mixer. For RF frequencies in the 176–185‐GHz band, the receiver exhibits a typical CW down‐conversion gain between 0 and 3 dB and a typical noise figure of 9 dB when operating at room temperature. For RF frequencies in the 190–196‐GHz band, the receiver exhibits a typical CW down‐conversion gain between 2 and 5 dB and a typical noise figure of 11 dB. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 458–462, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20501