𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adducts

✍ Scribed by S.J. Bass; M.S. Skolnick; H. Chudzynska; L. Smith

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
527 KB
Volume
75
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

W-band receiver module using indium phos
W-band receiver module using indium phosphide and gallium arsenide MMICs
✍ John W. Archer; Mei Gan Shen 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB

## Abstract This paper describes a low‐noise, high‐gain, single‐sideband, downconverting receiver module developed for point‐to‐point telecommunications in the 82–104‐GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used in t

176–200-GHz receiver module using indium
176–200-GHz receiver module using indium phosphide and gallium arsenide MMICs
✍ John W. Archer; Mei Gan Shen 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 185 KB

## Abstract This paper describes an integrated circuit‐based, down‐converting receiver module operating in the 176–200‐GHz range. The multichip module incorporates a cascaded pair of indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifiers, providing a combined gain of more

A 176-190 GHz transmitter module using i
A 176-190 GHz transmitter module using indium phosphide and gallium arsenide MMICs
✍ John W. Archer; Mei Gan Shen 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 127 KB

## Abstract This paper describes a double‐sideband, upconverting transmitter module with a potential application to future‐generation point‐to‐point telecommunications in the 176–190‐GHz band. The multichip module incorporates indium phosphide (InP) and gallium arsenide (GaAs) monolithic microwave