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VPE growth of high purity and high uniformity InGaAs/InP epilayers on InP

✍ Scribed by Y. Miura; K. Takemoto; T. Iwasaki; N. Yamabayashi; M. Kaji; S. Murai; K. Tada; S. Sakai


Book ID
103986382
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
279 KB
Volume
4
Category
Article
ISSN
0961-1290

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VPE growth of InGaAS/InP structures usin
✍ Dr. B. Diegner; T. Eberle; K. Jacobs πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 378 KB

## the Hydride System Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure wa