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Growth of VPE InP/InGaAs on InP for photodiode application

✍ Scribed by Yoshiharu Yamauchi; Nobuhiko Susa; Hiroshi Kanbe

Book ID
107789440
Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
603 KB
Volume
56
Category
Article
ISSN
0022-0248

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VPE growth of InGaAS/InP structures using the hydride system
✍ Dr. B. Diegner; T. Eberle; K. Jacobs πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 378 KB

## the Hydride System Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure wa