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Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures

โœ Scribed by H.M. Cox; M.A. Koza; V.G. Keramidas; M.S. Young

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
430 KB
Volume
73
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES

VPE growth of InGaAS/InP structures usin
VPE growth of InGaAS/InP structures using the hydride system
โœ Dr. B. Diegner; T. Eberle; K. Jacobs ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 378 KB

## the Hydride System Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure wa