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Via-hole filling by simultaneous deposition and ion etching

โœ Scribed by T. Mogami; H. Okabayashi; A. Tanikawa; E. Nagasawa

Book ID
113280225
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
508 KB
Volume
39
Category
Article
ISSN
0168-583X

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We report on the use of a carbon-rich Pt-based material, obtained by electron and ion beam assisted deposition from metal-organic precursor, as a mask for pattern transfer processes. Thin and narrow mask patterns subjected to oxygen plasma and reactive ion etching (RIE) of silicon in SF 6 were inves