✦ LIBER ✦

VIA-5 deep levels in ion-implanted Si after beam annealing

✍ Scribed by Sheng, N.H.; Mizuta, M.; Merz, J.L.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deep levels subsisting in ion implanted

✍ A. Mesli; J. C. Muller; P. Siffert 📂 Article 📅 1983 🏛 Springer 🌐 English ⚖ 428 KB

Annealing of damage-induced deep levels

✍ K. Xie; C.R. Wie 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 592 KB

Deep levels in Si-implanted and rapid th

✍ Ho Sub Lee; Hoon Young Cho; Eun Kyu Kim; Suk-K0 Min; Tae Won Kang; Chi Yhou Hong 📂 Article 📅 1991 🏛 Springer US 🌐 English ⚖ 395 KB

Formation mechanism of a new emission ba

✍ D. Y. Kim; Y. T. Oh; T. W. Kang; T. W. Kim 📂 Article 📅 1996 🏛 Springer 🌐 English ⚖ 273 KB

Electrical effects of residual defects i

✍ R. Kögler; J. von Borany; D. Panknin; W. Skorupa 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 393 KB

Ion implantation, ion beam mixing, and a

✍ B.R. Appleton; H. Naramoto; C.W. White; O.W. Holland; C.J. McHargue; G. Farlow; 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 831 KB