Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

✍ Scribed by D. Y. Kim; Y. T. Oh; T. W. Kang; T. W. Kim

• Publisher: Springer
• Year: 1996
• Tongue: English
• Weight: 273 KB
• Volume: 15
• Category: Article
• ISSN: 0261-8028
• DOI: 10.1007/bf00625018