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Deep levels in Si-implanted and rapid thermal annealed semi-insulating gaAs

โœ Scribed by Ho Sub Lee; Hoon Young Cho; Eun Kyu Kim; Suk-K0 Min; Tae Won Kang; Chi Yhou Hong

Book ID
112812697
Publisher
Springer US
Year
1991
Tongue
English
Weight
395 KB
Volume
20
Category
Article
ISSN
0361-5235

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Deep levels in rapid thermal annealed Ga
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The effect of rapid thermal annealing conditions on the defect levels existing in bulk Si-doped n-GaAs was investigated by deeplevel transient spectroscopy. The concentrations of four electron traps at E c -0.36 eV (T 1 ), Ec -0.37 eV (T2), E c -0.55 eV (T3) and Ec-0.75 eV (T4) were found to be depe

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