Deep levels in rapid thermal annealed GaAs

✍ Scribed by P. Kamiński; G. Gawlik; R. Kozłowski

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 398 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90101-5

✦ Synopsis

The effect of rapid thermal annealing conditions on the defect levels existing in bulk Si-doped n-GaAs was investigated by deeplevel transient spectroscopy. The concentrations of four electron traps at E c -0.36 eV (T 1 ), Ec -0.37 eV (T2), E c -0.55 eV (T3) and Ec-0.75 eV (T4) were found to be dependent on the annealing temperature. A large increase in the concentration of trap T1 accompanied by a sharp decrease in the concentration of trap T2 was observed after annealing at 650 °C. As a result of annealing at 750 °C, the concentration of trap T2 rose to the level as before annealing and the trap T3 almost disappeared. A significant drop in the concentration of trap T4 (EL2) was observed after annealing at 850 °C. Simultaneously, the change in the activation energy of the T4 (EL2) centre from 0.75 to 0.55 eV was found. The results are discussed in terms of point defect generation and annihilation and give a new insight into microscopic identity of the traps observed.