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Rapid thermal annealing of sputtered TiW on GaAs

โœ Scribed by M. Van Hove; M. de Potter; W. De Raedt; G. Zou; M. Meuris; H. Bender; M. Van Rossum


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
35 KB
Volume
38
Category
Article
ISSN
0169-4332

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๐Ÿ“œ SIMILAR VOLUMES


Deep levels in rapid thermal annealed Ga
โœ P. Kamiล„ski; G. Gawlik; R. Kozล‚owski ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 398 KB

The effect of rapid thermal annealing conditions on the defect levels existing in bulk Si-doped n-GaAs was investigated by deeplevel transient spectroscopy. The concentrations of four electron traps at E c -0.36 eV (T 1 ), Ec -0.37 eV (T2), E c -0.55 eV (T3) and Ec-0.75 eV (T4) were found to be depe