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Thermal annealing behaviour of deep levels in as-grown p-type MOCVD GaAs

โœ Scribed by Nazir A. Naz; Umar S. Qurashi; M. Zafar Iqbal

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
233 KB
Volume
404
Category
Article
ISSN
0921-4526

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Results of isochronal annealing up to a temperature of 660 K of n-type GaAs grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) are reported. Deep-level transient spectroscopy (DLTS) reveals EL2 as the only electron-emitting deep-level defect in our as-grown material, whereas th

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We report the results of isochronal annealing study of deep levels in Rh-doped n-type GaAs grown by metal-organic vapor phase epitaxy (MOVPE). Deep level transient spectroscopy (DLTS) technique has been employed to study the effects of annealing on deep levels in Rh-doped p + nn + junction samples.