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Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

✍ Scribed by Thelander, C.; FrobergFroberg, L.E.; Rehnstedt, C.; Samuelson, L.; Wernersson, L.-E.

Book ID: 120383095
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 333 KB
Volume: 29
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2007.915374

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