Variable range hopping conductivity in Si:As bolometers

✍ Scribed by C.C. Zammit; A.D. Caplin; M.J. Lea; P. Fozooni; J. Kennefick; J. Saunders

• Book ID: 104356743
• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 200 KB
• Volume: 165-166
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/s0921-4526(90)81008-c

✦ Synopsis

The temperature dependent resistance R(T) f o ion-implanted Si:As bolometers has been measured in the variable range hopping regime, with R(T) = CTam ezp(T,,,/T)"', for 1.6 > T > 0.2K. The exponent m changed from 0.5 to 0.28 as the dopant concentration approached the metal-insulator transition. These sensitive bolometers, with an implant depth of 0.1 microns, are limited by the thermal contact between electrons and phonons below O.lK. Ion-implanted Si bolometerr are being developed for use M infrared, X-ray and Dark Matter detectora (1). We present measurementa of the temperature dependent resistance R(T) of Si:Ae bolometem in the varlable