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Variable-range hopping conductivity in quasicrystals

✍ Scribed by N Rivier; M Durand

Book ID
108466917
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
56 KB
Volume
294-296
Category
Article
ISSN
0921-5093

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The temperature dependent resistance R(T) f o ion-implanted Si:As bolometers has been measured in the variable range hopping regime, with R(T) = CTam ezp(T,,,/T)"', for 1.6 > T > 0.2K. The exponent m changed from 0.5 to 0.28 as the dopant concentration approached the metal-insulator transition. Thes

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The low-temperature electrical conductivity sT of uncompensated insulating Si:P with P concentration N just below the metalΒ±insulator transition (MIT), i.e. 3X0 Γ‚ 10 18 cm Γ€3 $ N $ 3X5 Γ‚ 10 18 cm Γ€3 , was measured between 0.05 and 5 K. With decreasing N, sT shows a crossover from Mott variable-range