Variable range hopping conductivity in manganites
β Scribed by Yu.Kh. Vekilov; Ya.M. Mukovskii
- Book ID
- 113915807
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 117 KB
- Volume
- 152
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
The temperature dependent resistance R(T) f o ion-implanted Si:As bolometers has been measured in the variable range hopping regime, with R(T) = CTam ezp(T,,,/T)"', for 1.6 > T > 0.2K. The exponent m changed from 0.5 to 0.28 as the dopant concentration approached the metal-insulator transition. Thes
The low-temperature electrical conductivity sT of uncompensated insulating Si:P with P concentration N just below the metalΒ±insulator transition (MIT), i.e. 3X0 Γ 10 18 cm Γ3 $ N $ 3X5 Γ 10 18 cm Γ3 , was measured between 0.05 and 5 K. With decreasing N, sT shows a crossover from Mott variable-range