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Variable-range hopping conductivity and magnetoresistance in n-CuGaSe2

โœ Scribed by Lisunov, K. G.; Arushanov, E.; Thomas, G. A.; Bucher, E.; Schon, J. H.


Book ID
118276956
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
379 KB
Volume
88
Category
Article
ISSN
0021-8979

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Variable range hopping conductivity in S
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The temperature dependent resistance R(T) f o ion-implanted Si:As bolometers has been measured in the variable range hopping regime, with R(T) = CTam ezp(T,,,/T)"', for 1.6 > T > 0.2K. The exponent m changed from 0.5 to 0.28 as the dopant concentration approached the metal-insulator transition. Thes