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Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation

✍ Scribed by Y. Koshka; M. Mazzola; S. Yingquan; C. U. Pittman


Book ID
107452597
Publisher
Springer US
Year
2001
Tongue
English
Weight
195 KB
Volume
30
Category
Article
ISSN
0361-5235

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Vanadium doping using VCl4 source during
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Semi-insulating 4H-SiC epitaxial layers were produced by chloro-carbon epitaxial growth at an intermediate growth temperature of 1450 1C and at high growth temperatures of 1600 1C, enabling growth rates of 6 and in excess of 60 mm/h, respectively. Vanadium tetrachloride was used as the source of van