Vanadium doping using VCl4 source during
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Bharat Krishnan; Siva Kotamraju; Rooban Venkatesh K.G. Thirumalai; Yaroslav Kosh
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Article
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2011
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Elsevier Science
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English
β 856 KB
Semi-insulating 4H-SiC epitaxial layers were produced by chloro-carbon epitaxial growth at an intermediate growth temperature of 1450 1C and at high growth temperatures of 1600 1C, enabling growth rates of 6 and in excess of 60 mm/h, respectively. Vanadium tetrachloride was used as the source of van