Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC
✍ Scribed by Bharat Krishnan; Siva Kotamraju; Rooban Venkatesh K.G. Thirumalai; Yaroslav Koshka
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 856 KB
- Volume
- 321
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
Semi-insulating 4H-SiC epitaxial layers were produced by chloro-carbon epitaxial growth at an intermediate growth temperature of 1450 1C and at high growth temperatures of 1600 1C, enabling growth rates of 6 and in excess of 60 mm/h, respectively. Vanadium tetrachloride was used as the source of vanadium doping. In epitaxial layers otherwise dominated by nitrogen donors, vanadiumacceptor compensation mechanism was achieved, providing resistivities in excess of 10 5 O cm in fully compensated epilayers. Partial compensation enabled control of n-type doping in a wide range, down to around 10 14 cm À 3 in epilayers with N 2 donor concentration of 1 Â 10 15 cm À 3 . The domination of deep levels of vanadium was confirmed by photoluminescence spectroscopy. The limits for vanadium concentration consistent with degradation-free epilayer morphology were established to be around 1-1.5 Â 10 17 and slightly less than 1 Â 10 17 cm À 3 for the growth at 1450 and 1600 1C, respectively.