𝔖 Bobbio Scriptorium
✦   LIBER   ✦

VA-3 emitter-base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistors

✍ Scribed by Yoshida, J.; Kurata, M.; Obara, M.; Morizuka, K.; Mashita, M.; Hojo, A.

Book ID
114595001
Publisher
IEEE
Year
1984
Tongue
English
Weight
166 KB
Volume
31
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Graded-GaAs1βˆ’xPx bases in heterojunction
Graded-GaAs1βˆ’xPx bases in heterojunction bipolar transistors with InGaP emitters
✍ Michio Ohkubo; Nariaki Ikeda; Takao Ninomiya πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 518 KB

## We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. 0 19% John Wiley & Sons, Inc.