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Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristics

✍ Scribed by Yoshida, J.; Kurata, M.; Morizuka, K.; Hojo, A.


Book ID
114595256
Publisher
IEEE
Year
1985
Tongue
English
Weight
746 KB
Volume
32
Category
Article
ISSN
0018-9383

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Graded-GaAs1−xPx bases in heterojunction
✍ Michio Ohkubo; Nariaki Ikeda; Takao Ninomiya 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 518 KB

## We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. 0 19% John Wiley & Sons, Inc.