Current transport mechanism at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE

✍ Scribed by Rezazadeh, A.A.; Morgan, D.V.; Mawby, P.A.; Kerr, T.M.

• Book ID: 114595961
• Publisher: IEEE
• Year: 1987
• Tongue: English
• Weight: 244 KB
• Volume: 34
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1987.23026