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UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction

✍ Scribed by Fu, Junxue ;Luo, Yuan ;Yobas, Levent ;Chen, Kevin J.

Book ID: 115561479
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 777 KB
Volume: 209
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201228042

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con