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Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

โœ Scribed by Z.J. Qiu; Y.S. Gui; T. Lin; J. Lu; N. Tang; B. Shen; N. Dai; J.H. Chu


Book ID
108269273
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
185 KB
Volume
131
Category
Article
ISSN
0038-1098

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## Abstract We evaluate the Al~__x__~ Ga~1โ€“__x__~ N/GaN/Al~__y__~ Ga~1โ€“__y__~ N double heterostructure (DH) for heterostructure fieldโ€effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crackโ€free Al~__y__~ Ga~1โ€“__y__~ N buffer layer, so that the Al con