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Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas

✍ Scribed by Buchheim, C.; Goldhahn, R.; Gobsch, G.; Tonisch, K.; Cimalla, V.; Niebelschutz, F.; Ambacher, O.

Book ID: 111960156
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 558 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2830836

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con